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lect
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537
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:
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ttp
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//ij
p
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s
.
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Electron
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pro
per
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ticle
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y:
R
ec
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Ma
y
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2
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R
ev
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Sep
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ted
Oct
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Th
is
stu
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y
e
x
a
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s
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o
w
m
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th
a
n
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flo
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d
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t
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p
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m
a
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e
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a
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c
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d
c
h
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m
ica
l
v
a
p
o
r
d
e
p
o
siti
o
n
(P
EC
VD
)
p
ro
c
e
ss
a
ffe
c
ts
t
h
e
e
lec
tro
n
ic
p
r
o
p
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rti
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s
o
f
a
m
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p
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s
si
li
c
o
n
-
c
a
rb
o
n
(a
-
S
i
C
)
th
i
n
fil
m
s.
T
h
e
fi
lms
we
re
d
e
p
o
sited
wit
h
v
a
ry
in
g
m
e
th
a
n
e
f
lo
w
ra
tes
,
a
n
d
t
h
e
ir
stru
c
t
u
ra
l
a
n
d
e
lec
tro
n
ic
p
ro
p
e
rti
e
s
we
re
a
n
a
ly
z
e
d
u
sin
g
sp
e
c
tro
sc
o
p
ic
e
ll
ip
so
m
e
try
a
n
d
a
to
m
ic
fo
rc
e
m
icro
sc
o
p
y
(AFM
).
Re
su
lt
s
sh
o
w
t
h
a
t
th
e
m
e
th
a
n
e
flo
w
ra
te
in
fl
u
e
n
c
e
s
th
e
ra
ti
o
o
f
sp
2
t
o
sp
3
c
a
rb
o
n
b
o
n
d
i
n
g
,
w
h
ich
imp
a
c
ts
th
e
m
a
teria
l'
s
e
l
e
c
tro
n
ic
b
a
n
d
stru
c
tu
re
.
Hig
h
e
r
m
e
th
a
n
e
fl
o
w
ra
tes
i
n
c
re
a
se
sp
2
c
a
rb
o
n
c
o
n
ten
t,
re
d
u
c
i
n
g
th
e
b
a
n
d
g
a
p
e
n
e
rg
y
a
n
d
e
n
h
a
n
c
in
g
e
lec
t
rica
l
c
o
n
d
u
c
ti
v
i
ty
.
In
c
o
n
tras
t,
lo
we
r
f
lo
w
ra
tes
lea
d
to
h
ig
h
e
r
sp
3
b
o
n
d
in
g
,
wid
e
r
b
a
n
d
g
a
p
s,
a
n
d
d
e
c
re
a
se
d
c
o
n
d
u
c
t
iv
it
y
.
Th
i
s
stu
d
y
h
ig
h
li
g
h
ts
th
e
p
o
ten
ti
a
l
fo
r
o
p
ti
m
izi
n
g
m
e
th
a
n
e
fl
o
w
ra
tes
i
n
P
ECVD
to
tailo
r
t
h
e
e
lec
tro
n
ic
p
r
o
p
e
rti
e
s
o
f
a
-
S
iC
fi
lms
fo
r
sp
e
c
ifi
c
a
p
p
li
c
a
ti
o
n
s.
Th
e
fin
d
i
n
g
s o
ffe
r
v
a
lu
a
b
le
in
si
g
h
ts
f
o
r
d
e
sig
n
i
n
g
a
n
d
o
p
t
imiz
in
g
a
-
S
iC
m
a
teria
ls
fo
r
e
lec
tro
n
ic
d
e
v
ice
s.
F
u
t
u
re
re
se
a
rc
h
will
in
v
e
sti
g
a
te
h
o
w
o
th
e
r
d
e
p
o
siti
o
n
p
a
ra
m
e
ters
a
n
d
p
o
st
-
d
e
p
o
siti
o
n
tr
e
a
tme
n
ts
a
ffe
c
t
a
-
S
iC'
s
e
l
e
c
tro
n
ic
p
ro
p
e
rti
e
s,
a
imin
g
t
o
f
u
rth
e
r
imp
ro
v
e
m
a
teri
a
l
p
e
rfo
rm
a
n
c
e
fo
r
a
d
v
a
n
c
e
d
tec
h
n
o
lo
g
ica
l
a
p
p
li
c
a
ti
o
n
s.
K
ey
w
o
r
d
s
:
a
-
SiC
:H
Flo
w
r
ate
Me
th
an
e
PECVD
p
-
ty
p
e
Sp
ec
tr
o
s
co
p
y
ellip
s
o
m
etr
y
T
h
is i
s
a
n
o
p
e
n
a
c
c
e
ss
a
rticle
u
n
d
e
r th
e
CC B
Y
-
SA
li
c
e
n
se
.
C
o
r
r
e
s
p
o
nd
ing
A
uth
o
r
:
So
n
i Pr
ay
o
g
i
Dep
ar
tm
en
t o
f
E
lectr
ical
E
n
g
i
n
ee
r
in
g
,
Facu
lty
o
f
I
n
d
u
s
tr
ial
T
ec
h
n
o
lo
g
y
,
Per
tam
in
a
Un
iv
e
r
s
ity
T
en
g
k
u
Ny
ak
Ar
ief
Stre
et,
Simp
r
u
g
,
So
u
th
J
ak
a
r
ta,
DKI
J
ak
ar
ta
,
I
n
d
o
n
esia
E
m
ail:
p
r
ay
o
g
i.sp
@
g
m
ail.
co
m
1.
I
NT
RO
D
UCT
I
O
N
T
h
e
s
tu
d
y
o
f
am
o
r
p
h
o
u
s
s
ilic
o
n
ca
r
b
o
n
(a
-
SiC
)
h
as
g
ar
n
er
ed
s
ig
n
if
ican
t
atten
tio
n
d
u
e
to
its
u
n
iq
u
e
elec
tr
o
n
ic
p
r
o
p
er
ties
an
d
p
o
te
n
tial
ap
p
licatio
n
s
in
v
ar
io
u
s
tech
n
o
lo
g
ical
f
ield
s
s
u
ch
as
p
h
o
to
v
o
ltaic
ce
lls
,
lig
h
t
-
em
itti
n
g
d
io
d
es
(
L
E
Ds),
an
d
th
in
-
f
ilm
tr
an
s
is
to
r
s
[
1
]
.
Am
o
r
p
h
o
u
s
s
ilico
n
-
ca
r
b
o
n
co
m
b
in
es
th
e
b
en
ef
icial
p
r
o
p
er
ties
o
f
b
o
th
s
ilico
n
an
d
ca
r
b
o
n
,
r
esu
ltin
g
i
n
a
m
ater
ial
th
at
is
m
ec
h
an
ically
r
o
b
u
s
t,
c
h
em
ically
s
tab
le,
an
d
ex
h
ib
its
tu
n
ab
le
elec
tr
o
n
ic
ch
a
r
ac
ter
is
tics
[
2
]
.
Un
lik
e
cr
y
s
tall
in
e
m
ater
ials
,
a
-
SiC
lack
s
lo
n
g
-
r
an
g
e
o
r
d
er
,
wh
ich
p
r
o
v
id
es
d
is
tin
ctiv
e
ad
v
an
ta
g
es
in
ter
m
s
o
f
f
lex
ib
ilit
y
a
n
d
th
e
p
o
ten
tial
f
o
r
la
r
g
e
-
ar
ea
ap
p
licatio
n
s
[
3
]
.
T
h
e
d
ep
o
s
itio
n
p
r
o
ce
s
s
[
4
]
,
p
ar
tic
u
lar
ly
th
e
r
o
le
o
f
p
r
ec
u
r
s
o
r
g
ases
s
u
ch
as
m
eth
an
e,
p
lay
s
a
cr
itical
r
o
le
in
d
eter
m
in
in
g
th
e
s
tr
u
ct
u
r
al
an
d
elec
tr
o
n
ic
p
r
o
p
er
ties
o
f
th
e
r
e
s
u
ltin
g
f
ilm
s
[
5
]
.
Un
d
er
s
tan
d
i
n
g
th
e
in
f
lu
e
n
ce
o
f
m
eth
an
e
f
lo
w
r
ate
o
n
th
e
elec
tr
o
n
ic
p
r
o
p
er
ties
o
f
a
-
SiC
is
es
s
en
tial
f
o
r
o
p
tim
izin
g
its
p
er
f
o
r
m
an
ce
in
elec
tr
o
n
ic
d
ev
ices
[
6
]
.
T
h
e
d
ep
o
s
itio
n
o
f
a
-
SiC
ty
p
ically
in
v
o
lv
es
tech
n
iq
u
es
s
u
c
h
as
p
lasma
-
en
h
a
n
ce
d
c
h
em
i
ca
l
v
ap
o
r
d
ep
o
s
itio
n
(
PECVD)
,
wh
er
e
m
eth
an
e
s
er
v
es
as
a
ca
r
b
o
n
s
o
u
r
ce
.
T
h
e
m
eth
an
e
f
l
o
w
r
ate
d
u
r
in
g
th
e
d
ep
o
s
itio
n
p
r
o
ce
s
s
ca
n
s
ig
n
if
ican
tly
alter
th
e
b
o
n
d
i
n
g
co
n
f
ig
u
r
atio
n
s
with
in
th
e
m
ater
ial
[
7
]
.
Sp
ec
if
ical
ly
,
th
e
r
atio
o
f
s
p
^2
(
g
r
ap
h
ite
-
lik
e
)
t
o
s
p
3
(
d
iam
o
n
d
-
lik
e)
ca
r
b
o
n
b
o
n
d
s
ca
n
b
e
m
o
d
u
lated
b
y
v
ar
y
in
g
th
e
m
e
th
an
e
f
l
o
w
r
ate
[
8
]
,
wh
ich
in
tu
r
n
af
f
ec
ts
th
e
m
ater
ial's
elec
tr
o
n
ic
b
an
d
s
tr
u
ctu
r
e
[
9
]
.
An
in
cr
ea
s
e
in
m
eth
an
e
f
lo
w
r
ate
g
en
er
ally
Evaluation Warning : The document was created with Spire.PDF for Python.
I
n
t J Po
w
E
lec
&
Dr
i Sy
s
t
I
SS
N:
2088
-
8
6
9
4
E
lectro
n
ic
p
r
o
p
erti
es o
f
a
mo
r
p
h
o
u
s
s
ilico
n
ca
r
b
o
n
a
r
e
co
r
r
ela
ted
w
ith
th
e
meth
a
n
e
flo
w
r
a
te
(
S
o
n
i P
r
a
yo
g
i
)
531
lead
s
to
a
h
ig
h
er
co
n
ce
n
tr
atio
n
o
f
s
p
2
b
o
n
d
s
[
1
0
]
,
wh
ich
ar
e
ass
o
ciate
d
with
n
ar
r
o
wer
b
a
n
d
g
ap
s
an
d
h
ig
h
e
r
elec
tr
ical
co
n
d
u
ctiv
ity
[
1
1
]
.
C
o
n
v
er
s
ely
,
a
l
o
wer
m
eth
an
e
f
l
o
w
r
ate
f
av
o
r
s
th
e
f
o
r
m
atio
n
o
f
s
p
3
b
o
n
d
s
[
1
2
]
,
r
esu
ltin
g
in
wid
er
b
a
n
d
g
ap
s
an
d
r
ed
u
ce
d
c
o
n
d
u
ctiv
ity
[
1
3
]
.
T
h
ese
v
ar
iatio
n
s
in
b
o
n
d
in
g
an
d
elec
tr
o
n
ic
s
tr
u
ctu
r
e
u
n
d
er
s
co
r
e
th
e
im
p
o
r
tan
ce
o
f
p
r
ec
is
e
co
n
tr
o
l
o
v
er
th
e
d
e
p
o
s
itio
n
p
ar
am
eter
s
to
ac
h
iev
e
th
e
d
esire
d
elec
tr
o
n
ic
p
r
o
p
er
ties
in
a
-
SiC
f
ilm
s
[
1
4
]
.
I
n
ad
d
itio
n
to
th
e
s
tr
u
ctu
r
al
an
d
elec
tr
o
n
ic
im
p
licatio
n
s
,
t
h
e
m
eth
an
e
f
lo
w
r
ate
also
i
m
p
ac
ts
th
e
m
ater
ial'
s
d
ef
ec
t
s
tates
an
d
o
v
er
all
f
ilm
q
u
ality
.
De
f
ec
t
s
tates,
wh
ich
ar
is
e
f
r
o
m
in
co
m
p
lete
b
o
n
d
in
g
o
r
im
p
u
r
ities
,
ca
n
ac
t
as
tr
a
p
s
it
es
f
o
r
ch
ar
g
e
ca
r
r
ier
s
,
th
er
e
b
y
in
f
l
u
en
cin
g
th
e
elec
tr
o
n
ic
p
er
f
o
r
m
an
ce
o
f
th
e
m
ater
ial
[
1
5
]
.
A
th
o
r
o
u
g
h
in
v
e
s
tig
atio
n
in
to
th
e
r
elatio
n
s
h
ip
b
etwe
en
m
eth
an
e
f
lo
w
r
ate
an
d
th
e
r
esu
ltin
g
d
ef
ec
t
s
tates
is
cr
u
cial
f
o
r
o
p
tim
izin
g
th
e
elec
tr
o
n
ic
p
r
o
p
e
r
ties
o
f
a
-
SiC
.
Ad
v
an
ce
d
c
h
ar
ac
ter
izatio
n
tech
n
i
q
u
es,
s
u
ch
as
s
p
ec
tr
o
s
co
p
y
ellip
s
o
m
etr
y
,
wh
ile
th
e
s
u
r
f
ac
e
r
o
u
g
h
n
ess
m
o
r
p
h
o
lo
g
y
ato
m
ic
f
o
r
ce
m
ic
r
o
s
co
p
y
(
AFM)
,
ar
e
em
p
lo
y
ed
to
elu
cid
ate
th
ese
c
o
r
r
elatio
n
s
.
B
y
s
y
s
tem
atica
lly
s
tu
d
y
in
g
th
e
ef
f
ec
ts
o
f
m
eth
a
n
e
f
lo
w
r
ate
o
n
th
e
elec
tr
o
n
ic
p
r
o
p
e
r
ties
o
f
a
-
SiC
,
th
is
r
esear
ch
aim
s
to
p
r
o
v
id
e
a
co
m
p
r
eh
en
s
iv
e
u
n
d
er
s
tan
d
in
g
th
at
will
a
id
in
th
e
d
esig
n
an
d
f
a
b
r
icatio
n
o
f
h
ig
h
-
p
er
f
o
r
m
an
ce
a
-
SiC
-
b
ased
elec
tr
o
n
ic
d
e
v
ices
[
1
6
]
.
T
h
is
k
n
o
w
led
g
e
is
p
iv
o
tal
f
o
r
ad
v
an
cin
g
th
e
m
ate
r
ial'
s
ap
p
licatio
n
in
cu
ttin
g
-
ed
g
e
tech
n
o
lo
g
ies,
wh
er
e
tailo
r
ed
elec
tr
o
n
ic
p
r
o
p
er
ties
ar
e
p
ar
am
o
u
n
t.
2.
RE
S
E
ARCH
M
E
T
H
O
D
T
h
is
in
v
esti
g
atio
n
u
s
ed
c
o
r
n
i
n
g
g
lass
7
0
5
9
s
u
b
s
tr
ate,
m
an
u
f
ac
tu
r
ed
with
in
d
i
u
m
tin
o
x
id
e
(
I
T
O)
,
to
cr
ea
te
th
e
p
-
ty
p
e
la
y
er
o
f
a
-
Si
C
:H.
T
h
e
two
m
u
lti
-
ch
am
b
er
d
ep
o
s
itio
n
ch
a
m
b
er
s
in
th
e
P
E
C
VD
p
r
o
ce
s
s
ar
e
d
esig
n
ated
f
o
r
t
h
e
u
n
iq
u
e
p
u
r
p
o
s
e
o
f
d
ep
o
s
itin
g
p
-
ty
p
e
a
-
SiC
:H
lay
er
s
,
as
s
ee
n
in
Fig
u
r
e
s
1
(
a)
-
1
(
c)
.
Un
d
e
r
th
ese
cir
cu
m
s
tan
ce
s
,
th
e
r
ad
iat
io
n
h
ea
te
r
tem
p
e
r
atu
r
e
(
s
u
b
s
tr
ate
tem
p
er
atu
r
e)
is
th
e
o
n
ly
f
a
cto
r
th
at
af
f
ec
ts
th
e
f
ilam
en
t
tem
p
er
atu
r
e
[
1
7
]
.
T
h
e
s
o
u
r
ce
g
as
is
s
ilan
e
g
as
(
SiH
4
)
th
at
h
as
b
ee
n
c
o
n
ce
n
tr
ate
d
i
n
h
y
d
r
o
g
e
n
(
H
2
)
to
a
1
0
%
lev
el.
T
r
an
s
p
ar
en
t
a
n
d
ab
le
to
r
aise
th
e
co
n
ce
n
tr
atio
n
o
f
ch
ar
g
e
ca
r
r
ier
s
,
m
eth
an
e
(
C
H
4
)
is
ad
d
ed
as
a
p
-
ty
p
e
lay
e
r
o
p
tim
izatio
n
.
Dib
o
r
an
e
(
B
2
H
6
)
g
as
is
u
s
ed
as
a
d
o
p
an
t
g
as
at
a
co
n
ce
n
tr
atio
n
o
f
1
0
%
in
H
2
[
1
8
]
.
T
ab
le
1
illu
s
tr
ates th
e
g
r
o
wth
m
etr
ics th
at
wer
e
em
p
lo
y
e
d
.
T
ab
le
1
.
Ma
ter
ials
f
o
r
th
e
a
-
Si
C
:H
p
-
ty
p
e
lay
er
to
b
e
d
e
p
o
s
ited
D
e
p
o
si
t
i
o
n
p
a
r
a
m
e
t
e
r
s
P
-
t
y
p
e
l
a
y
e
r
o
f
a
mo
r
p
h
o
u
s s
i
l
i
c
o
n
c
a
r
b
o
n
(
a
-
S
i
C
:
H
)
P
-
1
P
-
2
F
l
o
w
r
a
t
e
S
i
H
4
2
0
sc
c
m
2
0
sc
c
m
F
l
o
w
r
a
t
e
B
2
H
6
2
sc
c
m
2
sc
c
m
F
l
o
w
r
a
t
e
H
2
2
0
sc
c
m
2
0
sc
c
m
F
l
o
w
r
a
t
e
C
H
4
1
0
sc
c
m
2
0
sc
c
m
P
o
w
e
r
R
F
5
W
a
t
t
5
W
a
t
t
Te
mp
e
r
a
t
u
r
e
2
1
0
o
C
2
1
0
o
C
P
r
e
ssu
r
e
4
8
0
0
mT
o
r
r
4
8
0
0
mT
o
r
r
Ti
me
1
0
mi
n
u
t
e
s
1
0
mi
n
u
t
e
s
(
a)
(
b
)
(
c)
Fig
u
r
e
1
.
Sch
em
atic
o
f
p
-
ty
p
e
a
-
SiC
:H
co
atin
g
s
am
p
le
p
r
ep
a
r
atio
n
:
(
a)
PECVD sy
s
tem
wit
h
a
m
u
lti
-
ch
am
b
er
,
(
b
)
s
am
p
les
p
an
el
p
-
ty
p
e
lay
er
a
-
SiC
:H
(
1
0
x
1
0
)
cm
2
in
teg
r
a
ted
with
a
co
n
d
u
ctiv
e
f
ilm
,
an
d
(
c)
s
p
ec
tr
o
s
co
p
y
e
llip
s
o
m
etr
y
(
V
-
VASE
,
J
.
A.
W
o
o
llam
C
o
.)
W
ith
s
p
ec
tr
o
s
co
p
y
ellip
s
o
m
etr
y
(
V
-
VASE
,
J
.
A.
W
o
o
llam
C
o
.
)
with
a
r
o
tatin
g
an
a
ly
ze
r
an
d
co
m
p
en
s
ato
r
in
Sin
g
ap
o
r
e
Sy
n
ch
r
o
tr
o
n
L
ig
h
t
So
u
r
ce
(
SS
L
S),
a
p
h
o
to
n
en
er
g
y
r
a
n
g
e
b
et
wee
n
0
.
6
an
d
6
.
5
eV
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2088
-
8
6
9
4
I
n
t J Po
w
E
lec
&
Dr
i Sy
s
t
,
Vo
l.
1
6
,
No
.
1
,
Ma
r
c
h
20
2
5
:
530
-
537
532
was
m
ea
s
u
r
ed
.
T
h
e
p
ar
am
eter
s
ψ
an
d
Δ
,
wh
ich
r
ep
r
esen
t
th
e
r
atio
o
f
th
e
am
p
litu
d
e
an
d
t
h
e
p
h
ase
d
if
f
e
r
en
ce
b
etwe
en
th
e
r
ef
lecte
d
lig
h
t
p
o
lar
ized
p
an
d
s
,
r
esp
ec
tiv
ely
,
wer
e
co
llected
o
n
a
7
0
°
an
g
le
o
f
in
cid
en
ce
.
W
ith
th
e
p
ar
a
m
eter
s
d
eter
m
i
n
ed
b
y
th
e
s
u
r
f
ac
e
r
o
u
g
h
n
ess
o
f
t
h
e
m
ea
s
u
r
em
en
t
r
esu
lts
f
r
o
m
P
-
1
a
n
d
P
-
2
ato
m
ic
f
o
r
ce
m
icr
o
s
co
p
y
(
AFM)
,
t
h
e
p
r
o
g
r
am
em
p
lo
y
ed
W
o
o
llam
C
o
m
p
lete
E
ase
to
f
u
r
th
e
r
an
aly
ze
th
e
f
itti
n
g
o
f
t
h
e
m
ea
s
u
r
em
en
t
d
ata.
T
h
e
th
ic
k
n
ess
,
r
o
u
g
h
n
ess
,
b
an
d
g
ap
,
an
d
o
p
tical
co
n
s
tan
ts
o
f
t
h
e
p
-
ty
p
e
lay
er
o
f
a
-
SiC
wer
e
all
d
eter
m
in
ed
b
y
ev
alu
atin
g
ea
ch
p
ar
a
m
eter
o
f
th
e
d
ielec
tr
ic
f
u
n
ctio
n
u
s
in
g
a
c
o
m
b
in
ati
o
n
o
f
T
a
u
c
-
L
o
r
en
tz
m
o
d
els (
T
L
)
/Ta
u
c
-
L
o
r
n
tz+
G
[
1
9
]
.
T
h
e
s
p
ec
tr
o
s
co
p
ic
ellip
s
o
m
etr
y
o
b
s
er
v
atio
n
s
o
n
th
e
p
-
ty
p
e
l
ay
er
o
f
a
-
SiC
:H
ar
e
an
aly
ze
d
u
s
in
g
th
e
f
o
llo
win
g
eq
u
atio
n
[
2
0
]
:
-
C
o
m
p
lex
d
ielec
tr
ic
f
u
n
ctio
n
s
(
)
=
1
(
)
+
2
(
)
(ω
=
th
e
an
g
u
lar
f
r
eq
u
e
n
cy
o
f
t
h
e
in
cid
en
t
p
h
o
to
n
)
.
-
R
ef
r
ac
tiv
e
in
d
ex
(
)
=
√
1
2
[
√
1
2
(
)
+
2
2
(
)
+
1
(
)
]
-
E
x
tin
ctio
n
co
e
f
f
icien
t
(
)
=
√
1
2
[
√
1
2
(
)
+
2
2
(
)
−
1
(
)
]
-
L
o
s
s
f
u
n
ctio
n
−
[
−
1
(
)
]
=
2
(
)
[
1
2
(
)
+
2
2
(
)
]
-
T
h
e
r
ef
lectiv
ity
o
f
n
o
r
m
al
in
ci
d
en
ce
(
)
=
[
(
)
−
1
]
2
+
2
(
)
[
(
)
+
1
]
2
+
2
(
)
3.
RE
SU
L
T
S
A
ND
D
I
SCU
SS
I
O
NS
T
h
e
r
esu
lts
o
f
d
ata
f
itti
n
g
ar
e
d
is
p
lay
ed
in
Fig
u
r
e
s
2
(
a
)
an
d
2
(
b
)
,
t
o
g
eth
er
with
th
e
m
ea
s
u
r
em
en
ts
o
f
<ψ>
an
d
<Δ>
f
o
r
th
e
s
p
ec
tr
o
s
co
p
ic
ellip
s
o
m
etr
y
f
o
r
s
am
p
l
es
P
-
1
an
d
P
-
2
.
d
er
iv
ed
f
r
o
m
th
e
s
am
p
le
s
u
r
f
ac
e
r
o
u
g
h
n
ess
o
f
P
-
1
an
d
P
-
2
as
s
h
o
wn
in
Fig
u
r
e
s
3
(
a)
an
d
3
(
b
)
in
o
r
d
er
to
f
ac
ilit
ate
th
e
o
p
tical
an
d
elec
tr
o
n
ic
an
aly
s
is
o
f
ea
ch
s
am
p
le.
T
h
e
s
u
r
f
ac
e
m
o
r
p
h
o
l
o
g
y
o
f
P
-
1
a
n
d
P
-
2
o
n
a
2
x
2
μ
m
2
f
ilm
ar
ea
was
d
is
p
lay
ed
.
I
t
ca
n
b
e
o
b
s
er
v
ed
th
at
th
e
r
e
is
a
h
ig
h
d
e
g
r
ee
o
f
h
o
m
o
g
en
eity
b
etw
ee
n
th
e
P
-
1
a
n
d
P
-
2
s
am
p
les.
I
n
s
am
p
le
s
P
-
1
,
th
e
g
r
ain
s
ize
was
f
o
u
n
d
to
b
e
m
o
d
est,
wh
ile
s
am
p
les
P
-
2
s
h
o
wed
a
lar
g
e
r
g
r
ain
s
ize.
T
h
is
r
esu
lts
f
r
o
m
m
o
d
if
icatio
n
s
to
th
e
n
u
clea
tio
n
p
r
o
ce
s
s
an
d
s
am
p
le
g
r
o
wth
b
r
o
u
g
h
t a
b
o
u
t b
y
th
e
ad
d
itio
n
o
f
th
e
m
eth
an
e
f
lo
w
r
ate
[
2
1
]
.
Sam
p
les
P
-
1
a
n
d
P
-
2
s
h
o
wed
th
at
t
h
e
s
am
p
les'
r
o
o
t
-
m
ea
n
-
s
q
u
a
r
e
(
R
MS)
s
u
r
f
ac
e
r
o
u
g
h
n
ess
v
alu
es,
as d
eter
m
in
ed
b
y
AFM
m
ea
s
u
r
em
en
ts
,
wer
e
8
.
9
5
an
d
6
.
2
0
n
m
.
(
a)
(
b
)
Fig
u
r
e
2
.
Fit
tin
g
s
(
p
o
in
t c
u
r
v
e
)
an
d
e
x
p
er
im
e
n
tal
d
ata
(
s
o
lid
cu
r
v
e)
f
r
o
m
<
Ψ
>
an
d
<
>
to
(
a)
P
-
1
an
d
(
b
)
P
-
2
o
b
tain
ed
u
s
in
g
an
an
g
le
7
0
o
m
ea
s
u
r
em
en
t
I
n
th
e
r
o
o
m
tem
p
e
r
atu
r
e
r
an
g
e
o
f
0
.
6
-
6
.
6
eV,
th
e
p
-
ty
p
e
la
y
er
o
f
a
-
SiC
:H
was
d
etec
ted
.
R
ef
r
ac
tiv
e
in
d
ex
,
d
ielec
tr
ic
c
o
n
s
tan
t,
ab
s
o
r
p
tio
n
c
o
ef
f
icien
t,
t
h
ick
n
ess
,
an
d
r
o
u
g
h
n
ess
o
f
th
e
p
-
ty
p
e
la
y
er
o
f
a
-
SiC
:H
ar
e
am
o
n
g
th
e
m
etr
ics
an
d
i
n
f
o
r
m
atio
n
o
n
th
e
o
p
tical
p
r
o
p
e
r
ties
o
f
m
ater
ials
th
at
wer
e
d
er
iv
ed
f
r
o
m
th
e
s
am
p
le
f
itti
n
g
f
in
d
in
g
s
f
o
r
P
-
1
an
d
P
-
2
.
Mo
r
eo
v
e
r
,
ea
c
h
s
am
p
le'
s
n
o
r
m
al
in
cid
e
n
ce
r
ef
lectiv
ity
(
<
R
>)
was
d
eter
m
in
ed
f
r
o
m
th
e
co
m
p
le
x
d
ielec
tr
ic
f
u
n
ctio
n
<ε
1
>
a
n
d
<ɛ
2
>,
o
p
tica
l
co
n
d
u
ctiv
ity
(
<σ
1
>)
,
r
ef
r
ac
ti
v
e
in
d
ex
(
<n
>)
,
an
d
ex
tin
ctio
n
co
ef
f
icien
t (
<k
>
)
[
2
2
]
.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
n
t J Po
w
E
lec
&
Dr
i Sy
s
t
I
SS
N:
2088
-
8
6
9
4
E
lectro
n
ic
p
r
o
p
erti
es o
f
a
mo
r
p
h
o
u
s
s
ilico
n
ca
r
b
o
n
a
r
e
co
r
r
ela
ted
w
ith
th
e
meth
a
n
e
flo
w
r
a
te
(
S
o
n
i P
r
a
yo
g
i
)
533
(
a)
(
b
)
Fig
u
r
e
3
.
Ato
m
ic
f
o
r
ce
m
icr
o
s
co
p
e
m
ea
s
u
r
em
e
n
ts
th
at
m
ea
s
u
r
e
(
a)
s
u
r
f
ac
e
r
o
u
g
h
n
ess
P
-
1
an
d
(
b
)
s
u
r
f
ac
e
r
o
u
g
h
n
ess
P
-
2
3
.
1
.
Co
m
plex
dielect
ric
f
un
ct
io
n <ε
1
>
a
nd
<
ɛ
2
>
T
h
r
o
u
g
h
o
u
t
th
e
m
ea
s
u
r
em
en
t
en
er
g
y
r
a
n
g
e,
th
e
m
ater
ial'
s
o
p
tical
an
d
elec
tr
ical
ch
ar
ac
te
r
is
tics
ar
e
d
escr
ib
ed
b
y
th
e
d
ielec
tr
ic
f
u
n
ctio
n
<ε
>.
T
h
e
r
ea
l
<ε
1
>
a
n
d
im
ag
in
ar
y
<ε
2
>
ar
e
th
e
two
p
a
r
ts
o
f
th
e
d
ielec
tr
ic
f
u
n
ctio
n
.
T
h
e
a
m
o
u
n
t
o
f
lig
h
t
ab
s
o
r
p
tio
n
in
th
e
m
ater
ial
is
r
ep
r
esen
ted
b
y
t
h
e
im
ag
in
a
r
y
co
m
p
o
n
en
t
<ε
2
>,
wh
er
ea
s
th
e
r
ea
l
co
m
p
o
n
e
n
t
<
ε
1
>
in
d
icate
s
th
e
p
o
lar
izatio
n
o
f
th
e
m
ater
ial
ca
u
s
ed
b
y
th
e
el
ec
tr
ic
d
ip
o
le,
wh
ich
co
n
tr
ib
u
tes
to
th
e
ato
m
ic
an
d
e
lectr
ic
p
o
lar
izatio
n
[
2
3
]
.
Sam
p
les
P
-
1
an
d
P
-
2
ex
h
ib
it
v
alu
es
o
f
2
.
9
4
eV
an
d
2
.
6
4
eV
f
o
r
E
0
,
r
esp
ec
tiv
ely
,
as
in
d
icate
d
b
y
t
h
e
r
ea
l
c
o
m
p
o
n
en
t
<ε
1
>
in
Fig
u
r
e
s
4
(
a)
a
n
d
4
(
b
)
.
Sam
p
le
P
-
2
is
ab
le
to
ab
s
o
r
b
m
o
r
e
en
e
r
g
y
th
a
n
s
am
p
le
P
-
1
wh
en
th
e
E
0
en
er
g
y
ch
a
n
g
es
an
d
th
is
u
ltima
tely
lead
s
to
an
im
p
r
o
v
em
e
n
t
in
th
e
p
-
ty
p
e
la
y
er
'
s
p
er
f
o
r
m
an
ce
o
n
th
e
s
o
lar
ce
ll
-
b
ased
p
-
1
-
n
a
-
SiC
:H.
At
th
at
en
er
g
y
,
s
am
p
le
P
-
2
is
ab
le
to
ch
an
g
e
in
en
er
g
y
m
o
r
e
th
a
n
s
am
p
le
P
-
1
b
y
a
lar
g
e
m
ar
g
in
(
0
.
3
eV)
[
2
4
]
.
Similar
ly
,
f
o
r
th
e
im
ag
in
ar
y
c
o
m
p
o
n
en
t
<ε
2
>,
t
h
e
v
alu
es
o
f
E
1
a
n
d
E
2
,
in
d
icativ
e
o
f
ea
ch
s
am
p
le'
s
ex
citab
ilit
y
,
r
ev
ea
l
th
at
s
am
p
le
P
-
2
'
s
E
1
an
d
E
2
v
alu
es c
h
an
g
e
at
a
lo
wer
en
er
g
y
th
a
n
s
am
p
le
P
-
1
'
s
.
(
a)
(
b
)
Fig
u
r
e
4
.
Dielec
tr
ic
f
u
n
ctio
n
o
f
ea
ch
lay
er
P
-
1
an
d
P
-
2
:
(
a
)
i
m
ag
in
ar
y
p
ar
t <
ε
2
>
an
d
(
b
)
r
e
al
p
ar
t <
ε
1
>
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2088
-
8
6
9
4
I
n
t J Po
w
E
lec
&
Dr
i Sy
s
t
,
Vo
l.
1
6
,
No
.
1
,
Ma
r
c
h
20
2
5
:
530
-
537
534
3
.
2
.
Ref
ra
ct
iv
e
ind
ex
<
n>
a
nd
ex
t
inct
io
n
co
ef
f
icient
<
k
>
T
h
e
r
e
f
r
ac
tiv
e
in
d
ex
o
f
th
e
m
ater
ial,
r
ep
r
esen
ted
b
y
th
e
v
alu
e
o
f
<
n
>,
an
d
th
e
en
er
g
y
lo
s
t
d
u
e
to
s
ca
tter
in
g
,
r
ep
r
esen
ted
b
y
th
e
v
alu
e
o
f
<
k
>,
ar
e
th
e
r
esu
lts
o
f
s
p
ec
tr
o
s
co
p
y
ellip
s
o
m
etr
y
m
ea
s
u
r
em
en
ts
[
2
5
]
.
T
h
e
o
p
tical
ch
ar
ac
ter
is
tics
o
f
s
am
p
le
lay
er
s
P
-
1
an
d
P
-
2
f
o
r
m
ea
s
u
r
em
en
ts
at
th
e
s
am
e
tem
p
er
atu
r
e
o
n
th
e
I
T
O
s
u
b
s
tr
ate
ar
e
d
is
p
lay
ed
in
Fig
u
r
e
s
5
(
a)
an
d
5
(
b
)
.
I
n
c
o
m
p
ar
is
o
n
to
th
e
P
-
1
s
am
p
le,
th
e
p
-
ty
p
e
a
-
SiC
:H
lay
er
q
u
ality
in
th
e
P
-
2
s
am
p
le
h
a
d
a
lo
wer
n
v
alu
e,
in
d
icatin
g
th
a
t
it
was
o
f
g
o
o
d
q
u
ality
.
T
h
e
m
ax
im
u
m
ab
s
o
r
p
tio
n
r
ate
ac
h
iev
e
d
f
o
r
s
am
p
le
P
-
2
i
s
h
ig
h
er
th
an
th
at
o
f
s
am
p
le
P
-
1
,
d
esp
ite
th
e
f
ac
t th
at
b
o
t
h
s
a
m
p
les ar
e
e
v
alu
ated
at
th
e
s
am
e
s
u
b
s
tr
ate
tem
p
er
at
u
r
e.
T
h
is
is
d
em
o
n
s
tr
ated
b
y
t
h
e
v
er
y
r
a
p
i
d
r
ed
u
ctio
n
o
b
s
er
v
ed
at
en
er
g
y
<
3
.
0
eV
in
<n
>
s
am
p
le
P
-
2
wh
en
co
m
p
ar
ed
to
s
am
p
le
P
-
1
.
T
h
e
tem
p
er
atu
r
e
o
f
th
e
s
u
b
s
tr
ate
h
as
a
s
ig
n
if
ican
t
im
p
ac
t
o
n
h
o
w
th
e
ato
m
s
ar
e
d
e
p
o
s
ited
an
d
d
if
f
u
s
e
o
v
er
it
d
u
r
i
n
g
d
e
p
o
s
itio
n
[
2
6
]
.
T
h
e
ato
m
s
o
n
th
e
s
u
b
s
tr
ate'
s
s
u
r
f
ac
e
will
v
ib
r
ate
d
u
e
to
its
tem
p
er
atu
r
e
in
th
is
in
s
tan
ce
,
s
tr
etch
in
g
th
e
s
p
ac
e
b
etwe
en
th
e
p
lan
es
a
n
d
s
im
p
lify
in
g
th
e
in
s
er
tio
n
p
r
o
ce
s
s
.
W
h
en
co
m
p
a
r
in
g
s
am
p
le
P
-
2
t
o
s
am
p
le
P
-
1
,
t
h
e
e
x
tin
ctio
n
c
o
ef
f
icien
t
<
k
>
in
s
am
p
le
P
-
2
i
s
f
o
u
n
d
to
b
e
3
.
0
eV
lo
wer
,
in
d
icatin
g
th
at
s
am
p
le
P
-
2
'
s
r
esu
lts
ar
e
d
en
s
er
.
As th
e
f
lo
w
r
ate
o
f
m
et
h
a
n
e
g
as in
cr
ea
s
es,
th
e
ex
tin
ctio
n
co
e
f
f
icien
t
ten
d
s
to
d
ec
r
ea
s
e.
T
h
e
ex
tin
ctio
n
co
ef
f
i
cien
t
cu
r
v
es
th
at
wer
e
o
b
tain
ed
h
av
e
f
in
ite
en
e
r
g
y
,
m
ea
n
in
g
t
h
at
a
s
ec
o
n
d
la
y
er
o
f
p
-
ty
p
e
a
-
SiC
:H
will
o
wn
its
en
er
g
y
p
r
ice.
T
h
e
v
alu
e
o
f
<
k
>,
wh
ich
is
in
th
e
n
eg
ativ
e,
in
d
icate
s
th
at
a
m
o
r
e
tr
an
s
p
ar
en
t
p
-
ty
p
e
a
-
SiC
:H
la
y
er
is
cr
ea
ted
at
en
e
r
g
ies
g
r
ea
t
er
th
an
1
.
2
eV
[
2
7
]
.
T
h
is
is
p
r
o
b
ab
ly
g
o
in
g
to
lead
to
ato
m
in
s
er
tio
n
p
r
o
ce
s
s
s
atu
r
atio
n
,
wh
ich
will p
r
o
d
u
ce
a
less
d
en
s
e
lay
er
.
(
a)
(
b
)
Fig
u
r
e
5
.
P
-
1
an
d
P
-
2
s
am
p
les' co
m
p
lex
r
ef
r
ac
tiv
e
i
n
d
ices a
r
e
(
a)
<n
>
a
n
d
(
b
)
<k
>
3
.
3
.
L
o
s
s
-
f
un
ct
io
n
<
−
[
−
(
)
]
>
a
nd
no
rm
a
l
incid
ent
re
f
lect
iv
it
y
<
>
L
o
s
s
-
f
u
n
ctio
n
<
−
[
−
1
(
)
]
>
as
a
f
u
n
ctio
n
o
f
en
er
g
y
ca
n
b
e
d
e
r
iv
ed
f
r
o
m
th
e
r
ea
l
co
m
p
o
n
en
t
<ε
1
>,
an
d
n
o
r
m
al
in
cid
e
n
t
r
ef
lectiv
ity
<R>
ca
n
b
e
d
eter
m
i
n
ed
f
r
o
m
th
e
im
ag
i
n
ar
y
c
o
m
p
o
n
en
t
<ε
2
>
[
2
8
]
,
as
s
ee
n
f
o
r
th
e
P
-
1
a
n
d
P
-
2
s
am
p
les
in
Fig
u
r
e
6
.
T
h
e
c
u
r
v
e
in
th
e
f
ig
u
r
e
<
−
[
−
1
(
)
]
>
h
as
s
h
if
ted
.
as
t
h
e
f
lo
w
r
ate
o
f
m
eth
a
n
e
g
as
in
c
r
e
ases
,
to
a
h
ig
h
e
r
en
er
g
y
at
P
-
2
.
I
n
t
h
is
ca
s
e,
a
s
h
if
t
to
a
h
ig
h
e
r
en
er
g
y
an
d
a
r
is
e
in
ca
r
b
o
n
co
n
ce
n
tr
atio
n
ar
e
r
e
lated
,
wh
er
ea
s
th
e
s
h
if
t
is
ca
u
s
ed
b
y
th
e
in
f
lu
e
n
ce
o
f
th
e
m
et
h
an
e
g
as
f
lo
w
r
ate.
T
h
e
cu
r
v
e
ca
n
b
e
u
s
ed
to
d
ete
r
m
in
e
th
e
a
-
SiC
:H
p
-
ty
p
e
lay
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with
Evaluation Warning : The document was created with Spire.PDF for Python.
I
n
t J Po
w
E
lec
&
Dr
i Sy
s
t
I
SS
N:
2088
-
8
6
9
4
E
lectro
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535
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e
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ate
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eth
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e
g
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[2
9
]
.
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[
3
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.
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[
31
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u
r
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6
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p
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-
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a)
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.
Evaluation Warning : The document was created with Spire.PDF for Python.
I
SS
N
:
2088
-
8
6
9
4
I
n
t J Po
w
E
lec
&
Dr
i Sy
s
t
,
Vo
l.
1
6
,
No
.
1
,
Ma
r
c
h
20
2
5
:
530
-
537
536
RE
F
E
R
E
NC
E
S
[
1
]
R
.
S
a
l
e
h
a
n
d
N
.
H
.
N
i
c
k
e
l
,
“
T
h
e
i
n
f
l
u
e
n
c
e
o
f
f
e
r
m
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e
n
e
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g
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t
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p
-
d
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p
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s s
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l
i
c
o
n
,
”
Ap
p
l
i
e
d
S
u
rf
a
c
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S
c
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e
,
v
o
l
.
2
5
4
,
n
o
.
1
1
,
p
p
.
3
3
2
4
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3
3
0
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2
0
0
8
,
d
o
i
:
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0
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0
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6
/
j
.
a
p
su
s
c
.
2
0
0
7
.
1
1
.
0
1
1
.
[
2
]
A
.
N
a
w
a
b
j
a
n
,
F
.
I
q
b
a
l
,
a
n
d
A
.
S
.
A
b
d
u
l
l
a
h
,
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f
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t
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s
t
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c
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p
p
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c
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t
i
o
n
,
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e
l
k
o
m
n
i
k
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(
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l
e
c
o
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m
u
n
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c
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t
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o
n
C
o
m
p
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t
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n
g
El
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t
r
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n
i
c
s
a
n
d
C
o
n
t
r
o
l
)
,
v
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l
.
1
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o
.
4
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p
p
.
1
3
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3
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3
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,
2
0
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8
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o
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/
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K
O
M
N
I
K
A
.
v
1
6
i
4
.
9
0
5
9
.
[
3
]
Z.
Ta
l
i
a
sh
v
i
l
i
e
t
a
l
.
,
“
O
p
t
i
c
a
l
p
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p
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t
i
e
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o
f
p
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r
i
o
d
i
c
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l
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p
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t
r
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d
p
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n
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t
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o
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p
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l
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n
d
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m
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l
.
5
5
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o
.
1
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p
.
1
0
2
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3
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o
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7
/
s1
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0
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2
-
023
-
0
5
2
7
4
-
x.
[
4
]
C
.
A
l
i
a
n
i
,
M
.
K
r
i
c
h
e
n
,
a
n
d
A
.
Z
o
u
a
r
i
,
“
I
n
f
l
u
e
n
c
e
o
f
t
h
e
s
e
mi
c
o
n
d
u
c
t
o
r
/
m
e
t
a
l
r
e
a
r
c
o
n
t
a
c
t
o
n
t
h
e
p
e
r
f
o
r
ma
n
c
e
o
f
n
(
a
-
s
i
:
h
)
/
i
(
a
-
si
:
h
)
/
p
(
c
-
si
)
h
e
t
e
r
o
j
u
n
c
t
i
o
n
so
l
a
r
c
e
l
l
s,
”
O
p
t
i
c
a
l
a
n
d
Q
u
a
n
t
u
m
El
e
c
t
ro
n
i
c
s
,
v
o
l
.
5
0
,
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o
.
7
,
2
0
1
8
,
d
o
i
:
1
0
.
1
0
0
7
/
s
1
1
0
8
2
-
0
1
8
-
1
5
5
5
-
4.
[
5
]
H
.
K
.
K
a
p
l
a
n
,
A
.
O
l
k
u
n
,
S
.
K
.
A
k
a
y
,
a
n
d
S
.
P
a
t
,
“
S
i
-
b
a
s
e
d
p
h
o
t
o
d
i
o
d
e
a
n
d
mat
e
r
i
a
l
c
h
a
r
a
c
t
e
r
i
z
a
t
i
o
n
o
f
t
i
o
2
t
h
i
n
f
i
l
m,
”
O
p
t
i
c
a
l
a
n
d
Q
u
a
n
t
u
m
E
l
e
c
t
r
o
n
i
c
s
,
v
o
l
.
5
3
,
n
o
.
5
,
2
0
2
1
,
d
o
i
:
1
0
.
1
0
0
7
/
s
1
1
0
8
2
-
0
2
1
-
0
2
8
8
4
-
1.
[
6
]
B
.
C
.
Ş
a
k
a
r
,
F
.
Y
ı
l
d
ı
r
ı
m
,
Z.
O
r
h
a
n
,
a
n
d
A
y
d
o
ğ
a
n
,
“
C
o
n
d
u
c
t
i
o
n
mec
h
a
n
i
s
m
a
n
d
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h
y
sic
s,
In
st
it
u
t
Tek
n
o
lo
g
i
S
e
p
u
lu
h
No
p
e
m
b
e
r
(IT
S
)
.
S
u
ra
b
a
y
a
,
In
d
o
n
e
sia
.
He
c
o
n
d
u
c
ts
re
se
a
rc
h
in
m
a
teria
ls
sc
ien
c
e
,
se
m
ico
n
d
u
c
to
r
p
h
y
sic
s
(th
i
n
fil
m
)
wit
h
th
e
P
ECVD
tec
h
n
i
q
u
e
f
o
r
so
lar ce
ll
a
p
p
li
c
a
ti
o
n
s
.
He
c
a
n
b
e
c
o
n
tac
ted
a
t
e
m
a
il
:
y
o
y
o
k
@
p
h
y
si
c
s.it
s.a
c
.
id
.
Da
r
m
in
t
o
c
u
rre
n
tl
y
wo
r
k
s
a
s
a
p
ro
fe
ss
o
r
a
t
t
h
e
De
p
a
rtme
n
t
o
f
P
h
y
sic
s,
I
n
stit
u
t
Tek
n
o
lo
g
i
S
e
p
u
l
u
h
No
p
e
m
b
e
r
(
ITS
)
,
S
u
ra
b
a
y
a
,
In
d
o
n
e
sia
.
He
d
o
e
s
re
se
a
rc
h
in
m
a
teria
ls
sc
ien
c
e
,
c
o
n
d
e
n
se
d
m
a
tt
e
r
p
h
y
sic
s,
m
a
g
n
e
ti
c
c
o
m
p
o
u
n
d
s,
a
n
d
n
a
n
o
-
/2
D
-
m
a
teria
ls.
His
g
ro
u
p
'
s
c
u
rre
n
t
p
ro
jec
t
is
'
De
v
e
lo
p
m
e
n
t
o
f
c
a
rb
o
n
-
b
a
se
d
m
a
teria
ls
fro
m
'
g
r
e
e
n
'
so
u
rc
e
s
o
f
c
a
rb
o
n
a
n
d
fu
n
c
ti
o
n
a
l
m
a
teria
ls
fro
m
n
a
tu
ra
l
re
so
u
rc
e
s
fo
r
e
lec
tro
n
ic
a
n
d
m
a
g
n
e
ti
c
a
p
p
li
c
a
ti
o
n
s.
He
c
a
n
b
e
c
o
n
tac
ted
a
t
e
m
a
il
:
d
a
rm
in
to
@p
h
y
sic
s.it
s.a
c
.
id
.
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